Micrometer-scale ballistic transport in encapsulated graphene at room temperature.
نویسندگان
چکیده
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
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ورودعنوان ژورنال:
- Nano letters
دوره 11 6 شماره
صفحات -
تاریخ انتشار 2011